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VS-GB600AH120N Datasheet Molding Type Module IGBT

Manufacturer: Vishay

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General Description

Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness.

It is designed for applications such as inverters and UPS.

 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage VCES Gate to emitter voltage VGES Collector current at TJ = 150 °C TC = 25 °C IC TC = 80 °C Pulsed collector current ICM (1) TC = 80 °C Diode continuous forward current IF Diode maximum forward current IFM Maximum power dissipation PD TJ = 150 °C Short circuit withstand time tSC TJ = 125 °C RMS isolation voltage VISOL f = 50 Hz, t = 1 min I2t-value, diode I2t VR = 0 V, t = 10 ms, TJ = 125 °C Note (1) Repetitive rating: Pulse width limited by maximum junction temperature.

Overview

www.vishay.com VS-GB600AH120N Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 600 A Double.

Key Features

  • High short circuit capability, self limiting to 6 x IC.
  • 10 μs short circuit capability.
  • VCE(on) with positive temperature coefficient.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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