* NPT warp 2 speed IGBT technology with positive temperature coefficient
* Square RBSOA
* HEXFRED® antiparallel diodes with ultrasoft reverse recovery
* Fully isolated package
* Very low internal inductance ( 5 nH typical)
* Industry standard outline
VS-GB90DA60U Datasheet (289.38 KB)
VS-GB90DA60U
289.38 KB
Igbt.
www.vishay.com VS-GB90DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 A SOT-227 PRODUCT SUMMARY VCES IC DC V.
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