VS-GT100TP120N Datasheet - Vishay

Half Bridge IGBT

VS-GT100TP120N Features

* Low VCE(sat) trench IGBT technology

* 10 μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175 °C

* Low inductance case

* Fast and soft reverse recovery antiparallel FWD

* Isolated cop

VS-GT100TP120N General Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Gate t.

VS-GT100TP120N Datasheet (183.81 KB)

VS-GT100TP120N Datasheet Preview — Preview of VS-GT100TP120N PDF

Datasheet Details

Part number:

VS-GT100TP120N

Manufacturer:

Vishay ↗

File Size:

183.81 KB

Description:

Half bridge igbt.
www.vishay.com VS-GT100TP120N Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C V.

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