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VS-GT120DA65U - IGBT

Key Features

  • Trench IGBT technology with positive temperature coefficient.
  • Square RBSOA.
  • FRED Pt® antiparallel diodes with ultrasoft reverse recovery.
  • Fully isolated package.
  • Very low internal inductance ( 5 nH typical).
  • Industry standard outline.
  • UL pending.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-GT120DA65U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC Speed 650 V 120 A at 90 °C 1.71 V 76 A at 90 °C 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL pending • Material categorization: for definitions of compliance please see www.vishay.