VS-GT120DA65U Description
.vishay. VS-GT120DA65U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC Speed 650 V 120 A at 90 °C 1.71 V 76 A at 90 °C 8 kHz to 30 kHz Package.
VS-GT120DA65U Key Features
- Trench IGBT technology with positive
- Square RBSOA
- FRED Pt® antiparallel diodes with ultrasoft
- Fully isolated package
- Very low internal inductance ( 5 nH typical)
- Industry standard outline
- UL pending
- Material categorization: for definitions of pliance
- Designed for increased operating efficiency in power
- Easy to assemble and parallel