* Trench IGBT technology with positive temperature coefficient
* Square RBSOA
* FRED Pt® antiparallel diodes with ultrasoft reverse recovery
* Fully isolated package
* Very low internal inductance ( 5 nH typical)
* Industry standard outline
VS-GT120DA65U Datasheet (270.28 KB)
VS-GT120DA65U
270.28 KB
Igbt.
www.vishay.com VS-GT120DA65U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A SOT-227 PRIMARY CHARACTERISTICS .
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