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VS-GT400TH60N Datasheet IGBT

Manufacturer: Vishay

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General Description

Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness.

It is designed for applications such as UPS and SMPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Gate to emitter voltage Collector current Pulsed collector current Diode continuous forward current Diode maximum forward current Maximum power dissipation Short circuit withstand time I2t-value, diode RMS isolation voltage VCES VGES IC ICM (1) IF IFM PD tSC I2t VISOL TC = 25 °C TC = 80 °C tp = 1 ms TJ = 175 °C TJ = 125 °C VR = 0 V, t = 10 ms, TJ = 125 °C f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature MAX.

Overview

www.vishay.com VS-GT400TH60N Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 400 A Dual.

Key Features

  • Low VCE(on) trench IGBT technology.
  • Low switching losses.
  • 5 μs short circuit capability.
  • VCE(on) with positive temperature coefficient.
  • Maximum junction temperature 175 °C.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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