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Vishay Intertechnology Electronic Components Datasheet

VS-MBRS360-M3 Datasheet

High Performance Schottky Rectifier

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www.vishay.com
VS-MBRS360-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 3.0 A
Cathode
Anode
DO-214AB (SMC)
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
SMC
3.0 A
60 V
0.61 V
30 mA at 125 °C
150 °C
Single die
5.0 mJ
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBRS360-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 3.0 Apk, TJ = 125 °C
TJ Range
VALUES
3.0
60
790
0.61
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-MBRS360-M3
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
IFSM
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TL = 118 °C, rectangular waveform
50 % duty cycle at TL = 105 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1.0 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
3.0
4.0
790
80
5.0
1.0
UNITS
A
mJ
A
Revision: 26-Aug-14
1 Document Number: 95749
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-MBRS360-M3 Datasheet

High Performance Schottky Rectifier

No Preview Available !

www.vishay.com
VS-MBRS360-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
CT
LS
dV/dt
TEST CONDITIONS
3A
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
TJ = 25 °C
TJ = 100 °C
VR = Rated VR
TJ = 125 °C
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP.
0.57
0.72
0.51
0.62
-
-
-
-
-
-
MAX.
0.74
0.9
0.61
0.77
0.5
20
30
180
3.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
TJ (1), TStg
RthJL (2)
RthJA
DC operation
Approximate weight
Marking device
Case style SMC (similar to DO-214AB)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB
VALUES
-55 to +150
UNITS
°C
12
°C/W
46
0.24
0.008
36
g
oz.
Revision: 26-Aug-14
2 Document Number: 95749
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-MBRS360-M3
Description High Performance Schottky Rectifier
Maker Vishay
Total Page 8 Pages
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