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VSB2045 - Photovoltaic Solar Cell Protection Schottky Rectifier

Features

  • Trench MOS Schottky technology TMBS ®.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • High forward surge capability.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106 P600.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition.

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Datasheet Details

Part number VSB2045
Manufacturer Vishay
File Size 134.43 KB
Description Photovoltaic Solar Cell Protection Schottky Rectifier
Datasheet download datasheet VSB2045 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr New Product VSB2045 Vishay General Semiconductor Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES • Trench MOS Schottky technology TMBS ® • Low forward voltage drop, low power losses • High efficiency operation • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 P600 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TOP max. 20 A 45 V 250 A 0.42 V 150 °C TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
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