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VSB3200 - High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TMBS® DO-201AD.
  • Halogen-free according to IEC 61249-2-21 definition.

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Datasheet Details

Part number VSB3200
Manufacturer Vishay
File Size 130.72 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VSB3200 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr New Product VSB3200 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TMBS® DO-201AD • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. 3.0 A 200 V 90 A 0.63 V 150 °C PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3.0 A TJ max.
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