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Vishay Intertechnology Electronic Components Datasheet

VSMG2000X01 Datasheet

Emitting Diodes

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End of Life April-2020 - Alternative Device: VSMY2850RGX01, VSMY2850GX01
www.vishay.com
VSMG2000X01, VSMG2020X01
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH
VSMG2000X01
VSMG2020X01
21725-2
DESCRIPTION
VSMG2000X01 series are infrared, 850 nm emitting diodes
in GaAlAs (DH) technology with high radiant power and high
speed, molded in clear, untinted plastic packages (with lens)
for surface mounting (SMD).
FEATURES
• Package type: surface-mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
• Package matches with detector VEMD2000X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IrDA compatible data transmission
• IR-illumination (CCTV)
• Miniature light barrier
• Photointerrupters
• Optical switch
• Shaft encoders
• IR emitter source for proximity applications
PRODUCT SUMMARY
COMPONENT
VSMG2000X01
VSMG2020X01
Ie (mW/sr)
40
40
Note
• Test conditions see table “Basic Characteristics“
ϕ (deg)
± 12
± 12
λp (nm)
850
850
tr (ns)
20
20
ORDERING INFORMATION
ORDERING CODE
VSMG2000X01
VSMG2020X01
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 6000 pcs, 6000 pcs/reel
MOQ: 6000 pcs, 6000 pcs/reel
PACKAGE FORM
Reverse gullwing
Gullwing
Rev. 1.3, 30-Sep-2019
1 Document Number: 85194
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VSMG2000X01 Datasheet

Emitting Diodes

No Preview Available !

End of Life April-2020 - Alternative Device: VSMY2850RGX01, VSMY2850GX01
www.vishay.com
VSMG2000X01, VSMG2020X01
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
tp/T = 0.5, tp = 100 μs
tp = 100 μs
Acc. figure 9, J-STD-020
J-STD-051, leads 7 mm,
soldered on PCB
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
5
100
200
1
170
100
- 40 to + 85
- 40 to + 100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
180
160
140
120
100
80 RthJA = 250 K/W
60
40
20
0
0
21341
10 20 30 40 50 60 70 80 90
Tamb - Ambient Temperature (°C)
100
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
60
RthJA = 250 K/W
40
20
0
0 10 20 30 40 50 60 70 80 90 100
21342
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
Angle of half intensity
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 1 mA
IF = 100 mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 100 mA, tp = 20 ms
IF = 100 mA
VF
VF
TKVF
TKVF
IR
CJ
Ie
Ie
φe
TKφe
ϕ
1.25
20
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
Fall time
Cut-off frequency
Virtual source diameter
IF = 30 mA
IF = 30 mA
IF = 30 mA
IF = 100 mA, 20 % to 80 %
IF = 100 mA, 20 % to 80 %
IDC = 70 mA, IAC = 30 mA pp
λp
Δλ
TKλp
tr
tf
fc
d
830
TYP.
1.45
2.3
- 1.8
- 1.1
125
40
350
40
- 0.35
± 12
850
35
0.25
20
20
23
1.5
MAX.
1.7
10
60
870
UNIT
V
V
mV/K
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Rev. 1.3, 30-Sep-2019
2 Document Number: 85194
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VSMG2000X01
Description Emitting Diodes
Maker Vishay
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VSMG2000X01 Datasheet PDF






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