VSMY98545DS Datasheet High Power Infrared Emitting Diode

Manufacturer: Vishay

VSMY98545DS high power infrared emitting diode by Vishay - Datasheet Preview

Datasheet Details

Part number	VSMY98545DS
Manufacturer	Vishay
File Size	254.44 KB
Description	High Power Infrared Emitting Diode
Datasheet	VSMY98545DS Datasheet

General Description

As part of the SurfLightTM portfolio, the VSMY98545DS is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens.

A 42 mil chip provides outstanding radiant intensity and allows DC operation of the device up to 1 A.

Superior ESD characteristics are ensured by an integrated Zener diode.

Overview

www.vishay.com VSMY98545DS Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter.

Key Features

Package type: surface mount.
Double stack technology.
Package form: high power SMD with lens.
Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24.
Peak wavelength: λp = 850 nm.
Zener diode for ESD protection up to 2 kV.
High radiant power.
High radiant intensity.
Angle of half intensity: ϕ = ± 45°.
Designed for high drive currents: up to 1 A (DC) and up to 5 A pulses.
Low thermal resistance: RthJP =.

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