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VT1045BP Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Solder dip 275 °C max. 10 s, per JESD 22-B106
  • pliant to RoHS Directive 2011/65/EU
  • Halogen-free according to IEC 61249-2-21 definition

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VT1045BP Description

Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V at IF = 5 A TMBS® TO-220AC.