* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106 .

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. CAS.

VT1045C

VT1045BP

VT1000

VT102

VT102-1D

VT102-2D

VT102-3D

VT10200C

VT10200C-E3

VT10200C-M3

VT10202C-M3

VT1060C

VT1060C-E3

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