VT3060G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Name: VT3060G-E3
SKU: VT3060G-E3-1143924

Vishay

The VT3060G-E3 by Vishay is a Dual High Voltage Trench MOS Barrier Schottky Rectifier. Below is the official datasheet preview.

Datasheet Details

Part number	VT3060G-E3
Manufacturer	Vishay
File Size	152.33 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VT3060G-E3-Vishay.pdf
Additional preview pages of the VT3060G-E3 datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Not recommended for PCB bottom side wave mounting.
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: for.

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Published: Aug 30, 2017 |