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Vishay Intertechnology Electronic Components Datasheet

M2035S Datasheet

(M2035S / M2045S) High Voltage Trench MOS Barrier Schottky Rectifier

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M2035S & M2045S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
TO-220AB
3
2
1
12
3 CASE
www.DataSheet4U.com
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
Tj max.
20 A
35 V, 45 V
200 A
0.55 V
150 °C
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, free-wheeling diodes,
dc-to-dc converters or polarity protection applications.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Peak repetitive reverse current per leg at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IRRM
dv/dt
TJ, TSTG
M2035S
M2045S
35 45
20
200
2.0
10000
- 55 to + 150
UNIT
V
A
A
A
V/µs
°C
Document Number 88953
24-Jul-06
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

M2035S Datasheet

(M2035S / M2045S) High Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

M2035S & M2045S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage (1)
at IF = 10 A
at IF = 20 A
at IF = 10 A
at IF = 20 A
Tj = 25 °C
Tj = 125 °C
Maximum reverse current at rated VR (1)
Tj = 25 °C
Tj = 125 °C
Typical junction capacitance
at 4.0 V, 1 MHz
Note:
VF
IR
CJ
0.52
0.62
0.42
0.55
80
24
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
MAX.
-
0.70
-
0.61
200
35
700
UNIT
V
µA
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M2035S
M2045S
Typical thermal resistance
RθJC
2.0
UNIT
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (G)
M2045S-E3/4W
www.DataSheet4U.com
1.877
PREFERRED PACKAGE CODE
4W
BASE QUANTITY
50/Tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
300
Tj = Tj max.
8.3 ms Single Half Sine-Wave
250
200
150
100
50
0
1 10 100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88953
24-Jul-06


Part Number M2035S
Description (M2035S / M2045S) High Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay Intertechnology
Total Page 4 Pages
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