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Vishay Intertechnology Electronic Components Datasheet

BAT54WS-V Datasheet

Small Signal Schottky Diodes

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Small Signal Schottky Diode
BAT54WS-V
Vishay Semiconductors
Features
• These diodes feature very low turn-on
voltage and fast switching
• These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
20145
Mechanical Data
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
GS18/10k per 13" reel (8 mm tape), 10k/box
GS08/3k per 7" reel (8 mm tape), 15k/box
Parts Table
Part
BAT54WS-V
Ordering code
BAT54WS-V-GS18 or BAT54WS-V-GS08
Type marking
L4
Remarks
Tape and reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Forward continuous current
Repetitive peak forward current
Surge forward current
Power dissipation 1)
tp < 1 s
Note
1) Valid provided that electrodes are kept at ambient temperature
Symbol
VRRM
IF
IFRM
IFSM
Ptot
Value
30
200 1)
300 1)
600 1)
150 1)
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Maximum junction temperature
Storage temperature range
Note
1) Valid provided that electrodes are kept at ambient temperature
Symbol
RthJA
Tj
Tstg
Value
650 1)
125
- 65 to + 150
Document Number 85667 For technical questions within your region, please contact one of the following:
Rev. 1.5, 05-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Unit
V
mA
mA
mA
mW
Unit
K/W
°C
°C
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

BAT54WS-V Datasheet

Small Signal Schottky Diodes

No Preview Available !

www.DataSheet.co.kr
BAT54WS-V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
tested with 100 µA pulses
Leakage current 1)
Forward voltage 1)
Diode capacitance
Reverse recovery time
VR = 25 V
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 1 V, f = 1 MHz
IF = IR = 10 mA; IR = 1 mA; RL = 100 Ω
Note
1) Pulse test: tp < 300 µs, θ < 2 %
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Symbol
V(BR)
IR
VF
VF
VF
VF
VF
CD
trr
Min.
30
Typ.
Max.
2
240
320
400
500
800
10
5
Unit
V
µA
mV
mV
mV
mV
mV
pF
ns
1000
Tj = 125 °C
100
- 40 °C
10
1
25 °C
0.1
0.01
0
18867
0.2 0.4 0.6 0.8 1 1.2 1.4
VF - Forward Voltage (V)
Figure 1. Typical Forward Current vs. Forward Voltage
vs. Various Temperatures
1000
100
10
1
0.1
Tj = 125 °C
100 °C
75 °C
50 °C
25 °C
0.01
0 5 10 15 20 25 30
18869
VR - Reverse Voltage (V)
Figure 3. Typical Reverse Current vs. Reverse Voltage
vs. Various Temperatures
14
12
10
8
6
4
2
0
0
18868
4 8 12 16 20 24 28
VR - Reverse Voltage (V)
Figure 2. Typical Capacitance vs. Reverse Applied Voltage
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85667
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.5, 05-Aug-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number BAT54WS-V
Description Small Signal Schottky Diodes
Maker Vishay Siliconix
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BAT54WS-V Datasheet PDF






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