IRF540S
IRF540S is Power MOSFET manufactured by Vishay.
FEATURES
- Surface-mount
- Available in tape and reel
- Dynamic dv/dt rating
Available
- Repetitive avalanche rated
- 175 °C operating temperature
Available
- Fast switching
- Ease of paralleling
- Material categorization: for definitions of pliance please see .vishay./doc?99912
Note
- This datasheet provides information about parts that are
Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface-mount power package capable of acmodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application.
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation
D2PAK (TO-263) Si HF540S-GE3 IRF540SPb F
D2PAK (TO-263) Si HF540STRL-GE3 a IRF540STRLPb F a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor
VGS at 10 V
TC = 25 °C TC = 100 °C
Linear derating factor (PCB mount) e
Single pulse avalanche energy b Avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dv/dt c
TC = 25 °C TA = 25 °C
EAS IAR EAR
PD dv/dt
Operating junction and storage temperature range Soldering remendations (peak temperature) d for 10...
Representative IRF540S image (package may vary by manufacturer)