SI1016CX Datasheet Text
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New Product
Si1016CX
Vishay Siliconix plementary N- and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.396 at VGS = 4.5 V N-Channel 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V 0.760 at VGS = 1.5 V 0.756 at VGS =
- 4.5 V P-Channel
- 20 1.038 at VGS =
- 2.5 V 1.440 at VGS =
- 1.8 V 2.4 at VGS =
- 1.5 V ID (A) 0.5 0.2 0.2 0.05
- 0.35
- 0.35
- 0.1
- 0.05 1 nC 0.75 nC Qg (Typ.)
Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFETs
- High-Side Switching
- Ease in Driving Switches
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Typical ESD Protection: N-Channel 1500 V P-Channel 1000 V (HBM)
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC
APPLICATIONS
- Load Switch, Small Signal Switches and Level-Shift Switches
- Battery Operated Systems
- Portable...