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Vishay Intertechnology Electronic Components Datasheet

SI2300DS Datasheet

N-Channel MOSFET

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www.vishay.com
Si2300DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
SOT-23 (TO-236)
D
3
Marking code: P2
1
G
Top View
2
S
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converter for portable
devices
• Load switch
D
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 4.5 V
RDS(on) max. () at VGS = 2.5 V
Qg typ. (nC)
ID (A) a
Configuration
30
0.068
0.085
3
3.6
Single
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
SOT-23
Si2300DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum power dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, d
t5s
Maximum junction-to-foot (drain)
Steady state
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 130 °C/W
SYMBOL
RthJA
RthJF
TYPICAL
90
60
LIMIT
30
± 12
3.6 a
3
3.1 b, c
2.5 b, c
15
1.4
0.9 b, c
1.7
1.1
1.1 b, c
0.7 b, c
-55 to +150
260
MAXIMUM
115
75
UNIT
V
A
W
°C
UNIT
°C/W
S10-0111-Rev. A, 18-Jan-10
1
Document Number: 65701
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SI2300DS Datasheet

N-Channel MOSFET

No Preview Available !

www.vishay.com
Si2300DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
VGS(th) temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance a
Dynamic b
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 12 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 4.5 V, ID = 2.9 A
VGS = 2.5 V, ID = 2.6 A
VDS = 15 V, ID = 2.9 A
30 - - V
- 21 -
mV/°C
- -3.2 -
0.6 - 1.5 V
-
-
± 100
nA
- -1
μA
- - 10
10 - - A
- 0.055 0.068
- 0.070 0.085
- 13 -
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 3.1 A
VDS = 15 V, VGS = 4.5 V, ID = 3.1 A
f = 1 MHz
VDD = 15 V, RL = 6
ID 2.5 A, VGEN = 4.5 V, Rg = 1
- 320 -
- 45 - pF
- 19 -
- 6.5 10
- 3 4.5
nC
- 0.8 -
- 0.5 -
0.6 3.2 6.4
- 10 15
- 15 25
- 20 30
- 11 20
ns
- 5 10
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
VDD = 15 V, RL = 6
ID 2.5 A, VGEN = 10 V, Rg = 1
- 12 20
- 15 25
- 10 15
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
IS
ISM
VSD
TC = 25 °C
IS = 2.5 A, VGS = 0 V
- - 1.4
A
- - 15
- 0.8 1.2 V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
trr
Qrr
ta
tb
IF = 2.5 A, di/dt = 100 A/μs,
TJ = 25 °C
- 11 20 ns
- 5 10 nC
-7-
ns
-4-
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S10-0111-Rev. A, 18-Jan-10
2
Document Number: 65701
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SI2300DS
Description N-Channel MOSFET
Maker Vishay Siliconix
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