SI2342DS
FEATURES
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.017 at VGS = 4.5 V 0.020 at VGS = 2.5 V 8 0.022 at VGS = 1.8 V 0.030 at VGS = 1.5 V 0.075 at VGS = 1.2 V
SOT-23
ID (A)a, e 6 6 6 6 6
Qg (Typ.)
6 n C
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFET
- Low On-Resistance
- 100 % Rg Tested
- pliant to Ro HS Directive 2002/95/EC
APPLICATIONS
- Load Switches for Low Voltage Gate Drive
- Low Voltage Operating Circuits
- Gate Drive 1.2 V to 5 V
1 3 D
Marking Code
(3)
F2
XXX Lot Traceability and Date Code
G (1) (2) S N-Channel MOSFET
Top View
Part # Code
Ordering Information: Si2342DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power...
