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Vishay Intertechnology Electronic Components Datasheet

SI3430DY Datasheet

N-Channel MOSFET

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SPICE Device Model Si3430DY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the 55 to 125°C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the 55 to 125°C
temperature ranges under the pulsed 0-V to 5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 71524
S-50383Rev. B, 21-Mar-05
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI3430DY Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
SPICE Device Model Si3430DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Total Gate Chargeb
Gate-Source Chargeb
Gate-Drain Chargeb
Turn-On Delay Time
Rise Timeb
Turn-Off Delay Timeb
Fall Timeb
Source-Drain Reverse Recovery Time
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = VGS, ID = 250 µA
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 2.4 A
VGS = 6 V, ID = 2.3 A
VDS = 15 V, ID = 2.4 A
IS = 1.7 A, VGS = 0 V
VDS = 50 V, VGS = 10 V, ID = 2.4 A
VDD = 50 V, RL = 50
ID 1 A, VGEN = 10 V, RG = 6
IF = 1.7 A, di/dt = 100 A/µs
Notes
a. Pulse test; pulse width 300 µs, duty cycle 2%
b. Guaranteed by design, not subject to production testing.
Typical
3
34
0.146
0.154
8.1
0.72
6.06
1.5
1.4
8
10
23
30
52
Unit
V
A
S
V
nC
ns
www.vishay.com
2
Document Number: 71524
S-50383Rev. B, 21-Mar-05
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI3430DY
Description N-Channel MOSFET
Maker Vishay Siliconix
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SI3430DY Datasheet PDF






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