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Si3430DV
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
FEATURES
ID (A)
2.4 2.3
rDS(on) (W)
0.170 @ VGS = 10 V 0.185 @ VGS = 6.0 V
D High-Efficiency PWM Optimized D 100% Rg Tested
TSOP-6 Top View
1 3 mm 6 5 (3) G 3 4
(1, 2, 5, 6) D
2
2.85 mm (4) S Ordering Information: Si3430DV-T1 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C L = 0.
SI3430DV Datasheet
