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Vishay Intertechnology Electronic Components Datasheet

SI4104DY Datasheet

N-Channel MOSFET

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New Product
N-Channel 100-V (D-S) MOSFET
Si4104DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
100 0.105 at VGS = 10 V
ID (A)a
4.6
Qg (Typ.)
8.5 nC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchET® Power MOSFET
• 100 % Rg Tested
• 100 % Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• High Frequency DC/DC Converter
• High Frequency Boost Converter
• LED Backlight for LCD TV
D
G
Ordering Information: Si4104DY-T1-E3 (Lead (Pb)-free)
Si4104DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
100
± 20
4.6
3.7
3.2b, c
2.6b, c
15
4.1
2.0b, c
9
4
5.0
3.2
2.5b, c
1.6b, c
- 55 to 150
S
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Document Number: 69936
S09-0764-Rev. B, 04-May-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4104DY Datasheet

N-Channel MOSFET

No Preview Available !

Si4104DY
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 10 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 5 A
Forward Transconductancea
gfs VDS = 15 V, ID = 5 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 50 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 50 V, VGS = 10 V, ID = 5 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 50 V, RL = 10 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 2 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
100
2.5
10
0.3
Typ. Max. Unit
112
- 8.5
0.085
7
V
mV/°C
4.5
± 100
1
10
0.105
V
nA
µA
A
Ω
S
446
47
18
8.5 13
3
2.5
1.3 2.5
9 18
9 18
10 20
8 16
0.82
54
135
48
6
4.6
15
1.2
80
200
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69936
S09-0764-Rev. B, 04-May-09


Part Number SI4104DY
Description N-Channel MOSFET
Maker Vishay Siliconix
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