900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SIHFS11N50A Datasheet

Power MOSFET

No Preview Available !

www.vishay.com
IRFS11N50A, SiHFS11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
52
13
18
Single
0.52
D2PAK (TO-263)
D
G
FEATURES
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Available
Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
Available
• Effective Coss Specified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
GD
S
S
N-Channel MOSFET
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half and Full Bridge
• Power Factor Correction Boost
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHFS11N50A-GE3
IRFS11N50APbF
D2PAK (TO-263)
SiHFS11N50ATRR-GE3a
IRFS11N50ATRRPa
D2PAK (TO-263)
SiHFS11N50ATRL-GE3a
IRFS11N50ATRLPa
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 4.5 mH, Rg = 25 , IAS = 11 A (see fig. 12).
c. ISD 11 A, dI/dt 140 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
11
7.0
44
1.3
275
11
17
170
6.9
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-1927-Rev. E, 09-Sep-13
1
Document Number: 91286
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SIHFS11N50A Datasheet

Power MOSFET

No Preview Available !

www.vishay.com
IRFS11N50A, SiHFS11N50A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Case (Drain)
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Ambient
RthJC
RthCS
RthJA
TYP.
-
0.50
-
MAX.
0.75
-
62
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VDS/TJ
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 6.6 Ab
VDS = 50 V, ID = 6.6 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Output Capacitance
Effective Output Capacitance
Coss
Coss eff.
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 400 Vc
MIN.
500
-
2.0
-
-
-
-
6.1
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.060
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.52
-
V
V/°C
V
nA
μA
S
1423
208
8.1
2000
55
97
-
-
-
-
-
-
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - - 52
Qgs
VGS = 10 V
ID = 11 A, VDS = 400 V
see fig. 6 and 13b
-
- 13 nC
Qgd - - 18
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
td(on)
tr
td(off)
tf
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
trr
Qrr
ton
VDD = 250 V, ID = 11 A
Rg = 9.1 , RD = 22
see fig. 10b
- 14 -
- 35 -
ns
- 32 -
- 28 -
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
TJ = 25 °C, IS = 11 A, VGS = 0 Vb
TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μsb
-
-
-
-
-
- 11
A
- 44
- 1.5 V
510 770 ns
3.4 5.1 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fom 0 % VDS to 80 % VDS.
S13-1927-Rev. E, 09-Sep-13
2
Document Number: 91286
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SIHFS11N50A
Description Power MOSFET
Maker Vishay Siliconix
PDF Download

SIHFS11N50A Datasheet PDF






Similar Datasheet

1 SIHFS11N50A Power MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy