SIHG22N60S-E3 - (SIHG22N60S-E3 / SIHG47N60S-E3) Power MOSFET

Vishay

Key Features

High E AR capability.
Improved RON x Qg figure of merit (FOM).
18.81 Ω-nC (SiHG22N60S-E3) - SiHP22N60S-E3, SiHF22N60S-E3, and SiHB22N60S-E3 also available.
15.12 Ω-nC (SiHG47N60S-E3).
Ultra-low RDS(on).
Ultra-low gate charge (Qg).
100 % avalanche tested.
dV/dt ruggedness.
Compliant to RoHS Directive 2002/95/EC.

SIHG22N60S-E3 (sihg22n60s-e3 / sihg47n60s-e3) power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SIHG22N60S-E3
Manufacturer	Vishay
File Size	527.74 KB
Description	(SIHG22N60S-E3 / SIHG47N60S-E3) Power MOSFET
Datasheet	SIHG22N60S-E3 Datasheet

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V i s h ay I n t e r t e c h n o l o g y, I n c . 600 V Power mosfets SiHG22N60S-E3 / SiHG47N60S-E3 m o sf e t s p r o d uc t o v e r v i e w http://www.DataSheet4U.net/ w w w. v i s h a y. c o m datasheet pdf - http://www.DataSheet4U.net/ 600 V power mosfets SiHG22N60S-E3 / SiHG47N60S-E3 Vishay is adding to its Super Junction power MOSFET family with new n-channel devices in the TO-247 package, featuring ultra-low maximum on-resistance and low gate charge for an improved figure of merit (FOM). Features: • High E AR capability • Improved RON x Qg figure of merit (FOM) – 18.81 Ω-nC (SiHG22N60S-E3) - SiHP22N60S-E3, SiHF22N60S-E3, and SiHB22N60S-E3 also available – 15.