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SUP/SUB65P04-15
New Product
Vishay Siliconix
P-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
–40 0.023 @ VGS = –4.5 V –50
rDS(on) (W)
0.015 @ VGS = –10 V
ID (A)
–65
TO-220AB
S
TO-263
G
DRAIN connected to TAB G G D S Top View SUP65P04-15 SUB65P04-15 P-Channel MOSFET D S
Top View D
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)b TC = 25_C TC = 125_C
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Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
–40 "20 –65 –37
Unit
V
A –240 –60 180 120c W 3.
SUB65P04-15 Datasheet
