* D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 10 ns 1.8-V Operation Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
Si1012X
Vishay ↗ Siliconix
167.68 KB
N-channel mosfet.
Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.2.
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