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SiHFD210 Datasheet Power MOSFET

Manufacturer: Vishay

Overview: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.2 1.8 4.

General Description

G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers.

The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

Key Features

  • 200 1.5 www. DataSheet4U. com.
  • Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS.

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