SIHFD020 Datasheet | Vishay

.Data Sheet.co.kr IRFD020, Si HFD020 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration VGS = 10 V 24 7.1 7.1 Single Features 50 0.10 - For Automatic Insertion - pact, End Stackable - Fast Switching - Ease of Paralleling - Excellent Temperature Stability - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT HVMDIP DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance bined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. The HVMDIP 4 pin, dual-in-line package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desireable, such as circuit boards for puters, printers, telemunications equipment, and consumer products. Their patibility with automatic insertion equipment, low-profile and end stackable Features represent the stat-of-the-art in power device packaging. S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb HVMDIP IRFD020Pb F Si HFD020-E3 IRFD020 Si...