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SIHFD020 - Power MOSFET

General Description

The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.

Key Features

  • 50 0.10.
  • For Automatic Insertion.
  • Compact, End Stackable.
  • Fast Switching.
  • Ease of Paralleling.
  • Excellent Temperature Stability.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Full PDF Text Transcription for SIHFD020 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SIHFD020. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet.co.kr IRFD020, SiHFD020 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 24 7.1 7...

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() Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 24 7.1 7.1 Single D FEATURES 50 0.10 • For Automatic Insertion • Compact, End Stackable • Fast Switching • Ease of Paralleling • Excellent Temperature Stability • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT HVMDIP DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.

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