SiHFD123 Datasheet | Vishay

IRFD123, Si HFD123 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration VGS = 10 V 16 4.4 7.7 Single Features 100 0.27 - Dynamic d V/dt Rating - Repetitive Avalanche Rated - For Automatic Insertion - End Stackable - 175 °C Operating Temperature - Fast Switching - Ease of Paralleling - Lead (Pb)-free Available Available Ro HS- PLIANT .. HEXDIP DESCRIPTION G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb HEXDIP IRFD123Pb F Si HFD123-E3 IRFD123 Si...