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SiHFD123 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • 100 0.27.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • For Automatic Insertion.
  • End Stackable.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription for SiHFD123 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFD123. For precise diagrams, and layout, please refer to the original PDF.

IRFD123, SiHFD123 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 16 4.4 7.7 Single D FEATURES...

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gs (nC) Qgd (nC) Configuration VGS = 10 V 16 4.4 7.7 Single D FEATURES 100 0.27 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in

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