SiHFD024 Datasheet | Vishay

Power MOSFET IRFD024, Si HFD024 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration 60 VGS = 10 V 25 5.8 11 Single HVMDIP S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb Features - Dynamic d V/dt Rating - For Automatic Insertion - End Stackable - 175 °C Operating Temperature - Fast Switching - Ease of Paralleling - Simple Drive Requirements - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. HVMDIP IRFD024Pb F Si HFD024-E3 IRFD024 Si...