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SiHFD210 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • 200 1.5 www. DataSheet4U. com.
  • Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription for SiHFD210 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFD210. For precise diagrams, and layout, please refer to the original PDF.

IRFD210, SiHFD210 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.2 1.8 4.5 Single D FEATURE...

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gs (nC) Qgd (nC) Configuration VGS = 10 V 8.2 1.8 4.5 Single D FEATURES 200 1.5 www.DataSheet4U.com • • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in mul

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