SiHFD210 Datasheet | Vishay

IRFD210, Si HFD210 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration VGS = 10 V 8.2 1.8 4.5 Single Features 200 1.5 .. - - - - - - - - Dynamic d V/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available Ro HS- PLIANT HEXDIP DESCRIPTION G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb HEXDIP IRFD210Pb F Si HFD210-E3 IRFD210 Si...