SiHFI510G Datasheet - Vishay Siliconix

Power MOSFET

SiHFI510G Features

* 100 0.54

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Distance = 4.8 mm

* 175 °C Operating Temperature

* Dynamic dV/dt Rating

* Low Thermal Resistance

* Lead (Pb)-free Available Availab

SiHFI510G General Description

Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The mould.

SiHFI510G Datasheet (776.51 KB)

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Datasheet Details

Part number:

SiHFI510G

Manufacturer:

Vishay ↗ Siliconix

File Size:

776.51 KB

Description:

Power mosfet.
IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U..

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SiHFI510G Features

SiHFI510G General Description

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