SiHFI510G mosfet equivalent, power mosfet.
100 0.54
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* 175 °C Operating Tempe.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and extern.
Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardwar.
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