SiHFI9610G Datasheet - Vishay Siliconix

Power MOSFET

SiHFI9610G Features

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Distance = 4.8 mm

* P-Channel

* Dynamic dV/dt Rating

* Low Thermal Resistance

* Lead (Pb)-free Available Available 3.0 RoHS

* COMPLIANT

SiHFI9610G General Description

G G D S D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-indus.

SiHFI9610G Datasheet (572.35 KB)

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Datasheet Details

Part number:

SiHFI9610G

Manufacturer:

Vishay ↗ Siliconix

File Size:

572.35 KB

Description:

Power mosfet.
IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4.

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SiHFI9610G Power MOSFET Vishay Siliconix

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SiHFI9610G Features

SiHFI9610G General Description

Datasheet Details

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