SiHFI9634G Datasheet | Vishay

FEATURES .. TO-220 FULLPAK - - - - - - - Advanced Process Technology Dynamic d V/dt Rating 150 °C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead (Pb)-free Available Ro HS PLIANT DESCRIPTION P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The moulding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 FULLPAK IRFI9634GPb F Si HFI9634G-E3 IRFI9634G Si HFI9634G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD d V/dt TJ, Tstg LIMIT - 250 ± 20 - 4.1 - 2.6 - 31 0.16 520 - 4.1 3.5 35 - 5.0 - 55 to + 150 300d 10 1.1 UNIT V A W/°C m J A m J W V/ns °C lbf - in N- m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 62 m H, RG = 25 Ω, IAS = - 4.1 A (see fig. 12). c. ISD ≤ - 4.1 A, d I/dt ≤ - 640 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number:...