SiHFI9610G - Power MOSFET

Product Overview

Vishay Siliconix

Datasheet Details

Part number	SiHFI9610G
Manufacturer	Vishay Siliconix
File Size	572.35 KB
Description	Power MOSFET
Datasheet	SiHFI9610G Datasheet
Additional preview pages of the SiHFI9610G datasheet.

Product details

Description

G G D S D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.This isolation is equivalent to using a 100 micr

Features

Isolated Package.
High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
Sink to Lead Creepage Distance = 4.8 mm.
P-Channel.
Dynamic dV/dt Rating.
Low Thermal Resistance.
Lead (Pb)-free Available Available 3.0 RoHS.

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Published: Dec 8, 2008 |