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SiHFI9630G - Power MOSFET

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • P-Channel.
  • Dynamic dV/dt Rating.
  • Low Thermal Resistance.
  • Lead (Pb)-free Available Available 0.80 RoHS.

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Full PDF Text Transcription

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IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com - 200 VGS = - 10 V 29 5.4 15 Single S FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available Available 0.80 RoHS* COMPLIANT TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.
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