SiHFI9630G Datasheet - Vishay Siliconix

Power MOSFET

SiHFI9630G Features

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)

* Sink to Lead Creepage Distance = 4.8 mm

* P-Channel

* Dynamic dV/dt Rating

* Low Thermal Resistance

* Lead (Pb)-free Available Available 0.80 RoHS

* COMPLIANT

SiHFI9630G General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moldin.

SiHFI9630G Datasheet (1.32 MB)

SiHFI9630G Datasheet Preview — Preview of SiHFI9630G PDF

Datasheet Details

Part number:

SiHFI9630G

Manufacturer:

Vishay ↗ Siliconix

File Size:

1.32 MB

Description:

Power mosfet.
IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4.

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SiHFI9630G Power MOSFET Vishay Siliconix

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SiHFI9630G Features

SiHFI9630G General Description

Datasheet Details

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