* TMBS®
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 3 2 1
* Low thermal resistance
* Solder dip 260 °C, 40 s
* Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICAT
V40100P
Vishay ↗ Siliconix
124.73 KB
Dual high-voltage trench mos barrier schottky rectifier.
New Product V40100P www.DataSheet4U.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.372 V .
📁 Related Datasheet
V40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100K Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100PG Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100PGW Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
