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V60100C Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V60100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
TMBS ®
TO-220AB
V60100C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
100 V
IFSM
320 A
VF at IF = 30 A
0.66 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 140 mH per diode
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
EAS
IRRM
dV/dt
TJ, TSTG
V60100C
100
60
30
320
450
1.0
10 000
- 40 to + 150
UNIT
V
A
A
mJ
A
V/µs
°C
Document Number: 89155 For technical questions within your region, please contact one of the following:
Revision: 17-Nov-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

V60100C Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

www.DataSheet.co.kr
New Product
V60100C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode
Reverse current at rated VR per diode
IR = 1.0 mA
IF = 5 A
IF = 10 A
IF = 15 A
IF = 20 A
IF = 30 A
IF = 5 A
IF = 10 A
IF = 15 A
IF = 20 A
IF = 30 A
VR = 80 V
VR = 100 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
100 (minimum)
0.45
0.52
0.58
0.63
0.73
0.36
0.45
0.53
0.58
0.66
24
13
65
30
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
0.63
-
0.79
-
-
0.58
-
0.70
500
20
1000
-
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
RθJC
V60100C
2.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V60100C-M3/4W
1.89
PACKAGE CODE
4W
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
70
Resistive or Inductive Load
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
30
D = 0.8
25 D = 0.5
D = 0.3
20
D = 0.2
15
D = 0.1
10
D = 1.0
T
5
D = tp/T
tp
0
0 5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89155
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 17-Nov-09
Datasheet pdf - http://www.DataSheet4U.net/


Part Number V60100C
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay Siliconix
Total Page 4 Pages
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