V60100C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: for definitions of pliance
- Part: V60100C
- Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
- Manufacturer: Vishay
- Size: 125.12 KB
Other V60100C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Vishay |
V60100C-M3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
Vishay |
V60100P | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
Vishay |
V60100PW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |