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VBT6045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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VBT6045C dual low-voltage trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	VBT6045C
Manufacturer	Vishay
File Size	99.34 KB
Description	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VBT6045C Datasheet

Overview

New Product VBT6045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K.
Not recommended for PCB bottom side wave mounting.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VBT6045C PIN 1 PIN 2 K.

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