* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halog
VFT1045C
Vishay ↗ Siliconix
97.80 KB
Dual low-voltage trench mos barrier schottky rectifier.
New Product VFT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® .
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