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Vishay Intertechnology Electronic Components Datasheet

BF995 Datasheet

N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode

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BF995
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features
D Integrated gate protection diodes
D High cross modulation performance
D Low noise figure
D High AGC-range
D Low feedback capacitance
21
G2 D
94 9279
13 579
34
BF995 Marking: MB
Plastic case (SOT 143)
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
G1
12623
S
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Tamb 60 °C
Storage temperature range
Type
Symbol
VDS
ID
±IG1/G2SM
Ptot
TCh
Tstg
Value
20
30
10
200
150
–55 to +150
Unit
V
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthChA
Value
450
Unit
K/W
Document Number 85009
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (7)


Vishay Intertechnology Electronic Components Datasheet

BF995 Datasheet

N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode

No Preview Available !

BF995
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source
ID = 10 mA, –VG1S = –VG2S = 4 V
breakdown voltage
Gate 1 - source
±IG1S = 10 mA, VG2S = VDS = 0
breakdown voltage
Gate 2 - source
±IG2S = 10 mA, VG1S = VDS = 0
breakdown voltage
Gate 1 - source
leakage current
±VG1S = 5 V, VG2S = VDS = 0
Gate 2 - source
leakage current
±VG2S = 5 V, VG1S = VDS = 0
Drain current
VDS = 15 V, VG1S = 0, VG2S = 4 V
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
VDS = 15 V, VG2S = 4 V, ID = 20 mA
VDS = 15 V, VG1S = 0, ID = 20 mA
Type
Symbol
V(BR)DS
Min Typ Max Unit
20 V
±V(BR)G1SS 8
14 V
±V(BR)G2SS 8
14 V
±IG1SS
100 nA
±IG2SS
100 nA
BF995
BF995A
BF995B
IDSS
IDSS
IDSS
–VG1S(OFF)
4
4
9.5
18 mA
10.5 mA
18 mA
3.5 V
–VG2S(OFF)
3.5 V
Electrical AC Characteristics
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified
Parameter
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
Test Conditions
VG1S = 0, VG2S = 4 V
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
VG2S = 4 to –2 V, f = 200 MHz
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
Symbol Min Typ
y21s
Cissg1
Cissg2
Crss
Coss
Gps
DGps
F
12 15
3.7
1.6
25
1.6
20
50
1.8
Max Unit
mS
pF
pF
fF
pF
dB
dB
2.5 dB
www.vishay.de FaxBack +1-408-970-5600
2 (7)
Document Number 85009
Rev. 3, 20-Jan-99


Part Number BF995
Description N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
Maker Vishay Telefunken
Total Page 7 Pages
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