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BF991 - N-channel dual-gate MOS-FET

Datasheet Summary

Description

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.

Marking code: %MA.

Features

  • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

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Datasheet preview – BF991

Datasheet Details

Part number BF991
Manufacturer NXP
File Size 218.45 KB
Description N-channel dual-gate MOS-FET
Datasheet download datasheet BF991 Datasheet
Additional preview pages of the BF991 datasheet.

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Full PDF Text Transcription

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BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year).
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