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BF991 - N-channel dual-gate MOS-FET

General Description

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.

Marking code: %MA.

Key Features

  • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

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Other Datasheets by NXP Semiconductors

Part Number Description
BF990A N-channel dual-gate MOS-FET
BF992 Silicon N-channel dual gate MOS-FET
BF994S N-channel dual-gate MOS-FET
BF996S N-channel dual-gate MOS-FET
BF997 N-channel dual-gate MOS-FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year).