Part BF991
Description N-channel dual-gate MOS-FET
Category MOSFET
Manufacturer NXP Semiconductors
Size 218.45 KB
NXP Semiconductors

BF991 Overview

Description

s, b source d drain g2 gate 2 g1 gate 1 DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. handbook, halfpage 4 3 d g2 g1 1 Top view 2 MAM039 s,b Marking code: %MA.

Key Features

  • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source