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BF991 Datasheet N-channel Dual-gate Mos-fet

Manufacturer: NXP Semiconductors

Overview: BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://.philips.semiconductors. use http://.nxp. http://.semiconductors.philips. use http://.nxp. (Internet) sales.addresses@.semiconductors.philips. use salesaddresses@nxp. (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.).

General Description

s, b source d drain g2 gate 2 g1 gate 1 DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.

handbook, halfpage 4 3 d g2 g1 1 Top view 2 MAM039 s,b Marking code: %MA.

Fig.1 Simplified outline (SOT143) and symbol.

Key Features

  • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

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