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WML10N65VD - Super Junction Power MOSFET

General Description

WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance.

WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency.

Key Features

  • VDS =700V @ Tj,max.
  • IDM =12.5A.
  • Typ. RDS(on) =0.8Ω.
  • 100% UIS tested.
  • Pb-free plating, Halogen free.

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Datasheet Details

Part number WML10N65VD
Manufacturer WAYON
File Size 577.64 KB
Description Super Junction Power MOSFET
Datasheet download datasheet WML10N65VD Datasheet

Full PDF Text Transcription for WML10N65VD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WML10N65VD. For precise diagrams, and layout, please refer to the original PDF.

WML10N65VD, WMK10N65VD, WMH10N65VD, WMM10N65VD WMN10N65VD, WMO10N65VD, WMP10N65VD, WMG10N65VD 650V 0.8Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new h...

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.8Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency. Features  VDS =700V @ Tj,max  IDM =12.5A  Typ. RDS(on) =0.

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