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WMM10N65VD - Super Junction Power MOSFET

Description

WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance.

WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency.

Features

  • VDS =700V @ Tj,max.
  • IDM =12.5A.
  • Typ. RDS(on) =0.8Ω.
  • 100% UIS tested.
  • Pb-free plating, Halogen free.

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Datasheet Details

Part number WMM10N65VD
Manufacturer WAYON
File Size 577.65 KB
Description Super Junction Power MOSFET
Datasheet download datasheet WMM10N65VD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WML10N65VD, WMK10N65VD, WMH10N65VD, WMM10N65VD WMN10N65VD, WMO10N65VD, WMP10N65VD, WMG10N65VD 650V 0.8Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency. Features  VDS =700V @ Tj,max  IDM =12.5A  Typ. RDS(on) =0.