Full PDF Text Transcription for BC847S (Reference)
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BC847S. For precise diagrams, and layout, please refer to the original PDF.
Dual General Purpose Transistor NPN Silicon P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Curre...
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er Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation TA=25 C Junction Temperature Storage Temperature Device Marking BC847S=1C Symbol VCEO VCBO VEBO IC Symbol PD TJ Tstg Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Off Characteristics Collector-Emitter Breakdown Voltage (IC=10mA ,I B=0) Collector-Base Breakdown Voltage (IC=10 µA ,IE=0) Emitter-Base Breakdown Voltage (IE=10 µA , IC=0) BC847S 3 21 45 6 NPN+NPN 6 54 123 SOT -363(SC-88) Value 45 50 6 200 Unit V V V mA Max 200 +150 -55 to +150 Unit mW °
BC847S Datasheet
