BC847S Datasheet | Specifications & PDF Download

JC(T JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S DUAL TRANSISTOR (NPN+NPN) APPLICATION This

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RoHS BC847S Multi-Chip TRANSISTOR (NPN) SOT-363 FEATURES Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current .,LICM : 200 mA Collecto

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Production specification Dual NPN Small Signal Surface Mount Transistor FEATURES  Epitaxial planar die construction.  Ultra-small surface mount pa

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NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (g

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BC847S BC847S E2 B2 C1 SC70-6 Mark: 1C pin #1 C2 B1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the ca

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SMD Type Transistors NPN Multi-Chip General Purpose Amplifier KC847S(BC847S) Features High current gain Low collector-emitter saturation voltage S

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Dual General Purpose Transistor NPN Silicon P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Vo

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Multi-chip transistor (NPN) APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unles

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BC846S, BC847S BC846S, BC847S SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 200 450 Tjmax = 150°C VCEO = 4

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Elektronische Bauelemente RoHS Compliant Product BC847S NPN Silicon Multi-Chip Transistor SOT-363 * Features Power dissipation PCM : 0.3 W (Tamp.=

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