Production specification Dual NPN Small Signal Su.
JCET
BC847S - DUAL TRANSISTOR
JC(T JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S DUAL TRANSISTOR (NPN+NPN) APPLICATION This .
Kexin
BC847S - NPN Multi-Chip General Purpose Amplifier
SMD Type Transistors NPN Multi-Chip General Purpose Amplifier KC847S(BC847S) Features High current gain Low collector-emitter saturation voltage S.
WILLAS
BC847S - NPN Transistor
RoHS BC847S Multi-Chip TRANSISTOR (NPN) SOT-363 FEATURES Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current .,LICM : 200 mA Collecto.
WEITRON
BC847S - Dual General Purpose Transistor
Dual General Purpose Transistor NPN Silicon P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Vo.
SeCoS
BC847S - NPN Silicon Multi-Chip Transistor
Elektronische Bauelemente RoHS Compliant Product BC847S NPN Silicon Multi-Chip Transistor SOT-363 * Features Power dissipation PCM : 0.3 W (Tamp.=.
Jin Yu Semiconductor
BC847S - NPN Transistor
Multi-chip transistor (NPN) APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unles.
GME
BC847S - Dual NPN Small Signal Surface Mount Transistor
Production specification Dual NPN Small Signal Surface Mount Transistor FEATURES Epitaxial planar die construction. Ultra-small surface mount pa.
Diotec
BC847S - SMD General Purpose NPN Transistors
BC846S, BC847S BC846S, BC847S SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 200...450 Tjmax = 150°C VCEO = 4.
Infineon Technologies AG
BC847S - NPN Silicon AF Transistor
NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (g.
Fairchild Semiconductor
BC847S - NPN Multi-Chip General Purpose Amplifier
BC847S BC847S E2 B2 C1 SC70-6 Mark: 1C pin #1 C2 B1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the ca.
