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BC847S - NPN Multi-Chip General Purpose Amplifier

Key Features

  • High current gain Low collector-emitter saturation voltage SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.11.25 -0.1 +0.152.3 -0.15 0.36 0.3+0.1 -0.1 2.1+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation Derate above 25 Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC PD R JA TJ, Tstg Rating 50 45 6.0 100 300 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Transistors NPN Multi-Chip General Purpose Amplifier KC847S(BC847S) Features High current gain Low collector-emitter saturation voltage SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.11.25 -0.1 +0.152.3 -0.15 0.36 0.3+0.1 -0.1 2.1+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation Derate above 25 Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC PD R JA TJ, Tstg Rating 50 45 6.0 100 300 2.4 415 -55 to +150 Unit V V V mA mW mW/ /W +0.050.95 -0.05 0.1max 0.1+0.05 -0.