Datasheet Summary
RoHS
Features
Power dissipation
TRANSISTOR (NPN) TO- 92
PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
1. BASE
2. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE unless otherwise specified)
Test
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage Bass-emitter saturation voltage Transition frequency
R T C E L
VCE (sat) VBE (sat)
Ic= 10...
