Datasheet4U Logo Datasheet4U.com

BC847S Datasheet - WILLAS

NPN Transistor

BC847S Features

* Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current .,LICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range OTJ,Tstg: -55℃to +150℃ CMARKING: 1C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter NCollector-

BC847S Datasheet (241.42 KB)

Preview of BC847S PDF

Datasheet Details

Part number:

BC847S

Manufacturer:

WILLAS

File Size:

241.42 KB

Description:

Npn transistor.

📁 Related Datasheet

BC847 NPN General Purpose Transistor (LITE-ON)

BC847 SMALL SIGNAL NPN TRANSISTORS (STMicroelectronics)

BC847 NPN EPITAXIAL SILICON TRANSISTOR (Fairchild Semiconductor)

BC847 NPN Silicon Transistor (AUK corp)

BC847 NPN Transistor (GME)

BC847 NPN General Purpose Transistor (Multicomp)

BC847 EPITAXIAL PLANAR NPN TRANSISTOR (KEC)

BC847 NPN Transistor (INCHANGE)

BC847 NPN SILICON TRANSISTOR (UTC)

BC847 NPN GENERAL PURPOSE TRANSISTORS (Pan Jit International)

TAGS

BC847S NPN Transistor WILLAS

Image Gallery

BC847S Datasheet Preview Page 2 BC847S Datasheet Preview Page 3

BC847S Distributor